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NVMFS4841N
TYPICAL PERFORMANCE CURVES
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10
C iss
C rss
5
V GS
0
V DS
5
C rss
10
15
20
T J = 25 ° C
C iss
C oss
25
30
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Q GS
2
4
Q T
Q GD
V DD = 15 V
V GS = 10 V
I D = 30 A
T J = 25 ° C
6 8 10 12 14 16 18 20 22 24 26
Q G , TOTAL GATE CHARGE (nC)
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate ? To ? Source and Drain ? To ? Source
Voltage vs. Total Charge
1000
V DD = 15 V
I D = 15 A
V GS = 10 V
30
25
V GS = 0 V
T J = 25 ° C
100
t r
t d(off)
20
15
10
t d(on)
t f
10
5
1
1
10
100
0
0.5
0.6
0.7
0.8
0.9
1.0
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
180
160
140
I D = 19 A
100
10 m s
120
100
10
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
100 m s
1 ms
80
60
1
0.1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
10 ms
dc
100
40
20
0
25
50 75
100 125
150
175
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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